Title :
Impact of back biasing on carrier transport in ultra-thin-body and BOX (UTBB) Fully Depleted SOI MOSFETs
Author :
Xu, Nuo ; Andrieu, François ; Ho, Byron ; Nguyen, Bich-Yen ; Weber, Olivier ; Mazure, C. ; Faynot, Olivier ; Poiroux, Thierry ; Liu, Tsu-Jae King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
A comprehensive study of the impact of back biasing on carrier transport behavior in Ultra-Thin Body and BOX (UTBB) Fully Depleted SOI (FD-SOI) MOSFETs and its implications for deeply scaled device performance is presented.
Keywords :
MOSFET; silicon-on-insulator; BOX; UTBB; back biasing; carrier transport; fully depleted SOI MOSFET; ultra-thin-body; Charge carrier processes; Logic gates; MOSFETs; Modulation; Scattering; Stress; Very large scale integration;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242487
