DocumentCode :
2644370
Title :
High Pulse Energy F-Band TRAPATT Diode Amplifiers
Author :
Bowen, J.H. ; Breese, M.E. ; Mikenas, V.A. ; Schwarzmann, A. ; Liu, S.G. ; Sobol, H.
Volume :
74
Issue :
1
fYear :
1974
fDate :
12-14 June 1974
Firstpage :
362
Lastpage :
364
Abstract :
Design considerations in building high-power wide-pulse-width TRAPATT diode amplifiers are outlined. Diode characteristics, package parasitic, and circuit impedance levels are discussed. Analytical and experimental investigations of the transient thermal behavior of TRAPATT diodes are presented. Performance characteristics of several MIC alumina substrate amplifiers are described.
Keywords :
Capacitors; Circuits; Heat sinks; High power amplifiers; Plasma temperature; Power generation; Pulse amplifiers; Radar; Semiconductor diodes; Space vector pulse width modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1974 S-MTT International
Conference_Location :
Atlanta, Georgia, USA
Type :
conf
DOI :
10.1109/MWSYM.1974.1123604
Filename :
1123604
Link To Document :
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