Title :
Complementary X-Band TRAPATT Diodes
Author :
Fong, T.T. ; Ying, R.S.
Abstract :
X-band n+p TRAPATT diodes have been fabricated and have shown better performance than their p+n complement. The low threshold power densities required to achieve the high efficiency oscillation have greatly enhanced their high duty and CW operation. The fabrication techniques for these high frequency devices and their performance in both pulsed and CW modes will be discussed.
Keywords :
Copper; Diodes; Electron traps; Fabrication; Frequency; Heat sinks; Packaging; Plasma applications; Substrates; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1974 S-MTT International
Conference_Location :
Atlanta, Georgia, USA
DOI :
10.1109/MWSYM.1974.1123605
