Title :
Modeling power semiconductor devices for realistic simulation
Author :
Hefner, Allen R.
Author_Institution :
Semicond. Electron. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Power electronics is an expanding industry. Applications include: power conversion; power conditioning; and motion control. Power semiconductor characteristics include: efficient drive; fast switching; and high current. Technologies being developed include the integration of power devices and logic circuits. Here, the author describes the power semiconductor models needed in circuit simulators for CAD which include: physics-based models for power semiconductors; models implemented into circuit simulators; extraction sequences to determine model parameters; and characterization procedures to verify model quality
Keywords :
circuit CAD; circuit analysis computing; digital simulation; power engineering computing; power semiconductor devices; semiconductor device models; CAD; characterization procedures; circuit simulators; efficient drive; extraction sequences; fast switching; high current; logic circuits; model parameters; model quality; motion control; physics-based models; power conditioning; power conversion; power electronics; power semiconductor devices; power semiconductor models; Circuit simulation; Electronics industry; Insulated gate bipolar transistors; NIST; Parameter extraction; Power electronics; Power semiconductor devices; Protection; US Department of Commerce; US Government;
Conference_Titel :
Computers in Power Electronics, 1994., IEEE 4th Workshop on
Conference_Location :
Trois-Rivieres, Que.
Print_ISBN :
0-7803-2091-3
DOI :
10.1109/CIPE.1994.396741
