Sub-fM DNA sensitivity by self-aligned maskless thin-film transistor-based SoC bioelectronics

Author

Chen, Min-Cheng ; Lin, Chang-Hsien ; Lin, Chia-Yi ; Hsueh, Fu-Kuo ; Huang, Wen-Hsien ; Lien, Yu-Chung ; Chen, Hsiu-Chih ; Hsueh, Hsiao-Ting ; Huang, Che-Wei ; Lin, Chih-Ting ; Liu, Yin-Chih ; Lee, Ta-Hsien ; Hua, Mu-Yi ; Qiu, Jian-Tai ; Liu, Mao-Chen ; Le

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

fYear

2012

fDate

12-14 June 2012

Firstpage

127

Lastpage

128

Abstract

This is the first study to successfully achieve record DNA sensitivity (sub-fM) by self-aligned, maskless, dual-channel, and metal-gate-based thin-film transistor nano-wire FET. Both novel device architecture (dual-channel) and optimization of integration processes (microcrystalline silicon and self-aligned sidewall sub-50 nm critical dimension) of nano-wire FET enhance the sensitivity to biological entities substantially. Meanwhile, the proposed device is accomplished with an embedded VLSI CMOS circuit. It can thus offer high application potential to pH, protein, and DNA probing in SoC-based portable bioelectronics.

Keywords

CMOS integrated circuits; DNA; VLSI; biomolecular electronics; embedded systems; field effect transistors; nanowires; pH; proteins; system-on-chip; thin film transistors; DNA probing; SoC-based portable bioelectronics; biological entities; device architecture; dual-channel thin-film transistor; embedded VLSI CMOS circuit; integration process; metal-gate-based thin-film transistor; microcrystalline silicon; nano-wire FET; pH; protein; self-aligned maskless thin-film transistor; self-aligned sidewall; size 50 nm; subfM DNA sensitivity; CMOS integrated circuits; DNA; FETs; Logic gates; Nanobioscience; Nanoscale devices; Sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2012 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4673-0846-5

Electronic_ISBN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2012.6242494

Filename

6242494