High performance bulk planar 20nm CMOS technology for low power mobile applications

Author

Shang, Huiling ; Jain, S. ; Josse, E. ; Alptekin, E. ; Nam, M.H. ; Kim, S.W. ; Cho, K.H. ; Kim, I. ; Liu, Y. ; Yang, X. ; Wu, X. ; Ciavatti, J. ; Kim, N.S. ; Vega, R. ; Kang, L. ; Meer, H.V. ; Samavedam, S. ; Celik, M. ; Soss, S. ; Utomo, H. ; Ramachandra

Author_Institution

Microelectron. Div., Semicond. R&D Center (SRDC), IBM, Hopewell Junction, NY, USA

fYear

2012

fDate

12-14 June 2012

Firstpage

129

Lastpage

130

Abstract

In this paper, we present a high performance planar 20nm CMOS bulk technology for low power mobile (LPM) computing applications featuring an advanced high-k metal gate (HKMG) process, strain engineering, 64nm metal pitch & ULK dielectrics. Compared with 28nm low power technology, it offers 0.55X density scaling and enables significant frequency improvement at lower standby power. Device drive current up to 2X 28nm at equivalent leakage is achieved through co-optimization of HKMG process and strain engineering. A fully functional, high-density (0.081um² bit-cell) SRAM is reported with a corresponding Static Noise Margin (SNM) of 160mV at 0.9V. An advanced patterning and metallization scheme based on ULK dielectrics enables high density wiring with competitive R-C.

Keywords

CMOS integrated circuits; high-k dielectric thin films; HKMG process; LPM; SNM; ULK dielectrics; advanced high-k metal gate process; competitive R-C; density scaling; frequency improvement; high performance bulk planar CMOS technology; high-density SRAM; low power mobile computing applications; lower standby power; metal pitch; size 20 nm; size 28 nm; static noise margin; strain engineering; voltage 0.9 V; voltage 160 mV; CMOS integrated circuits; Computer architecture; Logic gates; Metals; Microprocessors; Performance evaluation; Random access memory;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2012 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4673-0846-5

Electronic_ISBN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2012.6242495

Filename

6242495