Author :
Kar, G.S. ; Fantini, A. ; Chen, Y.-Y. ; Paraschiv, V. ; Govoreanu, B. ; Hody, H. ; Jossart, N. ; Tielens, H. ; Brus, S. ; Richard, O. ; Vandeweyer, T. ; Wouters, D.J. ; Altimime, L. ; Jurczak, M.
Abstract :
Here for the first time we discuss RRAM cell performance and reliability through process improvement. Excellent post-cycling (106) retention and post-bake retention and endurance have been achieved for the optimized process conditions. The optimized RRAM cells show potential for manufacturability and scalability for high density memory application.
Keywords :
CMOS memory circuits; etching; hafnium; hafnium compounds; integrated circuit reliability; random-access storage; titanium compounds; RRAM reliability; TiN-Hf-HfO2-TiN; high density memory application; post bake retention; post cycling retention; process improved RRAM cell performance; Encapsulation; Hafnium compounds; Oxidation; Reliability; Silicon compounds; Tin;
