Ultralow sub-500nA operating current high-performance TiNAl2O3HfO2HfTiN bipolar RRAM achieved through understanding-based stack-engineering

Author

Goux, L. ; Fantini, A. ; Kar, G. ; Chen, Y. -Y ; Jossart, N. ; Degraeve, R. ; Clima, S. ; Govoreanu, B. ; Lorenzo, G. ; Pourtois, G. ; Wouters, D.J. ; Kittl, J.A. ; Altimime, L. ; Jurczak, M.

Author_Institution

imec, Leuven, Belgium

fYear

2012

fDate

12-14 June 2012

Firstpage

159

Lastpage

160

Abstract

We demonstrate sub-500nA switching and tunable set voltage by inserting thin Al₂O₃ layer in TiNHfO₂HfTiN RRAM cell. Stack engineering clearly led to novel insights into the switching phenomenology: (i) O-scavenging is key in the forming process and stack-asymmetry management; (ii) dielectric-stack thinning allows lower forming current; (iii) `natural´ (asymmetry-induced) reset switching takes place close to the TiN anode; (iv) reset resistance is limited by material-barrier properties at TiN interface.

Keywords

alumina; bipolar memory circuits; hafnium compounds; random-access storage; titanium compounds; TiN-Al₂O₃-HfO₂-Hf-TiN; anode; asymmetry-induced reset switching; dielectric-stack thinning; forming process; high-performance bipolar RRAM cell; material-barrier properties; stack-asymmetry management; stack-engineering; tunable set voltage; ultralow operating current bipolar RRAM cell; Aluminum oxide; Hafnium compounds; Resistance; Switches; Tin; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2012 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4673-0846-5

Electronic_ISBN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2012.6242510

Filename

6242510