• DocumentCode
    2644815
  • Title

    85nm-wide 1.5mA/µm-ION IFQW SiGe-pFET: Raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study

  • Author

    Mitard, J. ; Witters, L. ; Eneman, G. ; Hellings, G. ; Pantisano, L. ; Hikavyy, A. ; Loo, R. ; Eyben, P. ; Horiguchi, N. ; Thean, A.

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2012
  • fDate
    12-14 June 2012
  • Firstpage
    163
  • Lastpage
    164
  • Abstract
    Beside the VTH-tunability, a raised SiGe S/D module offers higher LG-scalability than an embedded SiGe S/D in SiGe-IFQW pFETs. In-depth transport study of record performing 1.5mA/μm-ION strained-SiGe IFQW pFETs reveals that mobility improvement is still the key performance booster whereas LG-scaling has limited impact.
  • Keywords
    Ge-Si alloys; MOSFET; IFQW-pFET; S-D module; Si0.75Ge0.25; current 1.5 mA; embedded S-D benchmarking; in-depth hole transport study; in-depth transport study; key performance booster; size 85 nm; Benchmark testing; Electrostatics; Junctions; Logic gates; Performance evaluation; Silicon; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2012 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-0846-5
  • Electronic_ISBN
    0743-1562
  • Type

    conf

  • DOI
    10.1109/VLSIT.2012.6242512
  • Filename
    6242512
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2644815