Title :
Electrical And Structural Characterization Of Gaas Vertical-sidewall Layers Grown By Atomic Layer Epitaxy
Author :
Gladden, D.B. ; Wang, C.A. ; Goodhue, W.D. ; Lincoln, G.A.
Author_Institution :
Massachusetts Institute of Technology
fDate :
29 Jul-2 Aug 1991
Keywords :
Annealing; Atherosclerosis; Atomic layer deposition; Electrons; Gallium arsenide; Ohmic contacts; Publishing; Solid state circuits; Testing;
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
DOI :
10.1109/LEOSST.1991.638945
