DocumentCode
2644853
Title
Electrical And Structural Characterization Of Gaas Vertical-sidewall Layers Grown By Atomic Layer Epitaxy
Author
Gladden, D.B. ; Wang, C.A. ; Goodhue, W.D. ; Lincoln, G.A.
Author_Institution
Massachusetts Institute of Technology
fYear
1991
fDate
29 Jul-2 Aug 1991
Firstpage
55
Lastpage
56
Keywords
Annealing; Atherosclerosis; Atomic layer deposition; Electrons; Gallium arsenide; Ohmic contacts; Publishing; Solid state circuits; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN
0-87942-618-7
Type
conf
DOI
10.1109/LEOSST.1991.638945
Filename
638945
Link To Document