DocumentCode
2644871
Title
Development of ultra-thin Chip-on-Wafer process using bumpless interconnects for three-dimensional memory/logic applications
Author
Maeda, N. ; Kitada, H. ; Fujimoto, K. ; Kim, Y.S. ; Kodama, S. ; Yoshimi, S. ; Akazawa, M. ; Mizushima, Y. ; Ohba, T.
Author_Institution
Grad. Sch. of Eng., Univ. of Tokyo, Tokyo, Japan
fYear
2012
fDate
12-14 June 2012
Firstpage
171
Lastpage
172
Abstract
Chip-on-Wafer (COW) stacking structure using stack-first and bumpless interconnects was successfully fabricated for the first time. Chips were arrayed and bonded onto the wafer by back-to-face and gap filling between chips were carried out using organic material without void formation. Chips on the wafer were thinned down to 5 μm. Via-holes were formed at off-chip area (outside the chip). Copper redistribution line was formed using the via-first Damascene method. Lower leakage current as low as back ground was found between pads. No failure and an approximate 100% yield were achieved in the vertical wiring for multi-chips COW stacking.
Keywords
integrated circuit interconnections; leakage currents; logic circuits; storage management chips; three-dimensional integrated circuits; bumpless interconnects; copper redistribution line; leakage current; logic circuit; multichip COW stacking structure; organic material; size 5 mum; stack-first interconnects; three-dimensional memory circuit; ultrathin chip-on-wafer process; vertical wiring; via-first Damascene method; Bonding; Educational institutions; Filling; Organic materials; Silicon; Stacking; Substrates; 3D-IC; Bumpless contact and Off-chip via; COW;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location
Honolulu, HI
ISSN
0743-1562
Print_ISBN
978-1-4673-0846-5
Electronic_ISBN
0743-1562
Type
conf
DOI
10.1109/VLSIT.2012.6242516
Filename
6242516
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