• DocumentCode
    2644979
  • Title

    Antimonide NMOSFET with source side injection velocity of 2.7×107 cm/s for low power high performance logic applications

  • Author

    Ali, A. ; Madan, H. ; Barth, M.J. ; Hollander, M.J. ; Boos, J.B. ; Bennett, B.R. ; Datta, S.

  • Author_Institution
    Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2012
  • fDate
    12-14 June 2012
  • Firstpage
    181
  • Lastpage
    182
  • Abstract
    Antimonide (Sb) quantum well (QW) MOSFETs are demonstrated with integrated high-κ dielectric (1nmAl2O3-10nm HfO2). The long channel Sb NMOS exhibits effective electron mobility of 6,000 cm2/Vs at high field (2 × 1012 /cm2 of charge density (Ns)), which is the highest reported value for any III-V MOSFET. The short channel Sb NMOSFET (LG = 150nm) exhibits a cut-off frequency (fT) of 120GHz, fT - LG product of 18GHz.μm and source side injection velocity (veff) of 2.7×107 cm/s, at drain bias (VDS) of 0.75V and gate overdrive of 0.6V. The measured fT and fT × LG are 2 x higher, and veff is 4× higher than Si NMOS (1.0-1.2V VDD) at similar LG, and are the highest for any III-V MOSFET.
  • Keywords
    MOSFET; antimony compounds; electron mobility; low-power electronics; quantum well devices; antimonide NMOSFET; cut-off frequency; drain bias; electron mobility; gate overdrive; high-κ dielectric; low power high performance logic applications; quantum well MOSFET; source side injection velocity; voltage 0.75 V; Dielectrics; Frequency measurement; Logic gates; MOS devices; Pulse measurements; Silicon; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2012 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-0846-5
  • Electronic_ISBN
    0743-1562
  • Type

    conf

  • DOI
    10.1109/VLSIT.2012.6242521
  • Filename
    6242521
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2644979