Title :
YIG-Tuned GaAs FET Oscillators
Author :
Heyboer, Timothy L. ; Emery, Frank E.
Abstract :
The design and construction of a C-X straddle band YIG-tuned oscillator with 4 GHz frequency coverage is presented. A 1mu-gate GaAs FET is used for the active element, and is tuned by a YIG sphere. A one-stage single ended GaAs FET buffer amplifier is included to enhance overall performance. Power output is a minimum of 5 mW at 10 GHz, and overall performance is equal or superior to that offered by alternative swept frequency sources.
Keywords :
Circuits; FETs; Feedback; Frequency; Gallium arsenide; Impedance; Inductance; Iron; Oscillators; Scattering parameters;
Conference_Titel :
Microwave Symposium, 1976 IEEE-MTT-S International
Conference_Location :
Cherry Hill, NJ, USA
DOI :
10.1109/MWSYM.1976.1123638
