• DocumentCode
    2644990
  • Title

    YIG-Tuned GaAs FET Oscillators

  • Author

    Heyboer, Timothy L. ; Emery, Frank E.

  • fYear
    1976
  • fDate
    14-16 June 1976
  • Firstpage
    48
  • Lastpage
    50
  • Abstract
    The design and construction of a C-X straddle band YIG-tuned oscillator with 4 GHz frequency coverage is presented. A 1mu-gate GaAs FET is used for the active element, and is tuned by a YIG sphere. A one-stage single ended GaAs FET buffer amplifier is included to enhance overall performance. Power output is a minimum of 5 mW at 10 GHz, and overall performance is equal or superior to that offered by alternative swept frequency sources.
  • Keywords
    Circuits; FETs; Feedback; Frequency; Gallium arsenide; Impedance; Inductance; Iron; Oscillators; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium, 1976 IEEE-MTT-S International
  • Conference_Location
    Cherry Hill, NJ, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1976.1123638
  • Filename
    1123638
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2644990