Title :
Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications
Author :
Leqi Zhang ; Redolfi, A. ; Adelmann, C. ; Clima, S. ; Radu, Iuliana P. ; Yang-Yin Chen ; Wouters, D.J. ; Groeseneken, Guido ; Jurczak, Malgorzata ; Govoreanu, B.
Author_Institution :
Interuniv. Microelectron. Centre, Leuven, Belgium
Abstract :
We propose a novel metal/silicon/metal (MSM) selector using ultrathin undoped amorphous silicon (a-Si) for resistive-RAM selector application. The new selector behaves as a bidirectional diode, showing a high current drive (~2.2 MA/cm)2, high selectivity (~240 for 1/2 bias), fast switching speed , and excellent endurance ( at target drive current). The doping-free a-Si structure alleviates the dopant-induced variability concerns for ultrascaled devices and eliminates the need for a dopant-activation anneal. Circuit simulations show feasibility of 1-Mb array, with over 25% read margin and 70% write margin, when using the new MSM structure as a selector for a HfO2-based resistive switching memory element.
Keywords :
amorphous semiconductors; elemental semiconductors; random-access storage; semiconductor diodes; silicon; Si; bidirectional diode; bipolar RRAM selector applications; circuit simulations; dopant activation anneal; dopant induced variability; fast switching speed; high current drive; high selectivity; metal diode; metal silicon metal selector; resistive RAM; resistive switching memory element; ultrascaled devices; ultrathin metal; ultrathin undoped amorphous silicon; Arrays; Doping; Metals; Performance evaluation; Reliability; Silicon; Switches; Amorphous silicon (a-Si); bidirectional diode; bipolar RRAM; cross-point array; metal/silicon/metal (MSM); selector;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2293591
