DocumentCode
2645221
Title
In Situ GaAs Substrate Preparation For III-V And Metal Overgrowth By Molecular Beam Epitaxy
Author
Choquette, Kent D. ; Hong, M. ; Mannaerts, J.P. ; Freund, Robert S. ; Wetzel, R.C.
Author_Institution
AT&T Bell Laboratories, Murray Hill NJ 07974
fYear
1991
fDate
29 Jul-2 Aug 1991
Firstpage
58
Lastpage
59
Keywords
Annealing; Etching; Gallium arsenide; Gold; Hydrogen; III-V semiconductor materials; Molecular beam epitaxial growth; Plasma applications; Plasma materials processing; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN
0-87942-618-7
Type
conf
DOI
10.1109/LEOSST.1991.638947
Filename
638947
Link To Document