Single vs. dual ion beam growth of CN/sub x/

Summary form only given. Amorphous carbon nitride (CN_x) films were grown using single and dual ion beam deposition processes. The single ion beam process utilized methane (CH₄) and nitrogen (N₂) fed into a 20 cm, 13.56 MHz RF ion source. For the dual ion beam process, a 3 cm Kaufman ion source flowing nitrogen gas was utilized to reactively sputter a 99.999% carbon target and the 20 cm RF ion source flowing additional nitrogen was used to enhance the nitrogen concentration within the deposited film. Rutherford backscattering spectroscopy (RBS) and elastic recoil spectroscopy (ERS) shows nitrogen at a maximum of 15 at.% and 39 at.% and hydrogen at an average of 35 at.% and 5 at.% for the single and dual ion beam arrangements respectively. Resulting films had a maximum nitrogen-to-carbon (N/C) ratio of 0.25 and 0.80 respectively