Boundary conditions effect on states and transitions in a quantum-well — nanobridge — quantum dot structure

Author

Goray, Leonid I. ; Racec, Paul N.

Author_Institution

St. Petersburg Acad. Univ., St. Petersburg, Russia

fYear

2014

fDate

26-30 May 2014

Firstpage

89

Lastpage

95

Abstract

We consider a varied-dimension InGaAs/GaAs structure of quantum well - nanobridge (NB) - quantum dot embedded in a "virtual" cylinder Ω. Electron and hole eigenstates are computed for the whole system using the finite volume method and effective mass approximation. Hybrid states and significant oscillator strength changes appear in the combined system at small values of the NB length under the Dirichlet boundary conditions imposed on the boundaries of Ω.

Keywords

III-V semiconductors; effective mass; finite volume methods; gallium arsenide; indium compounds; oscillator strengths; semiconductor quantum dots; semiconductor quantum wells; Dirichlet boundary condition; InGaAs-GaAs; boundary condition effect; effective mass approximation; electron eigenstates; embedded quantum-well-nanobridge-quantum dot structure; finite volume method; hole eigenstates; hybrid states; oscillator strength; varied-dimension structure; virtual cylinder; Boundary conditions; Charge carrier processes; Eigenvalues and eigenfunctions; Indexes; Niobium; Oscillators; Quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Days on Diffraction (DD), 2014

Conference_Location

St. Petersburg

Print_ISBN

978-1-4799-7331-6

Type

conf

DOI

10.1109/DD.2014.7036430

Filename

7036430