Title :
A 12-15 GHz High Gain Amplifier Design Using Submicron Gate GaAs Field Effect Transistors
Author :
Walker, Martin G. ; Crescenzi, E. James, Jr.
Abstract :
An amplifier covering 12-15 GHz with 22 dB gain and less than 5.0 dB noise figure using GsAs FETs with submicron gate length was constructed. Techniques used for device characterization and amplifier circuit synthesis along with measured data are presented.
Keywords :
Bonding; Circuit synthesis; FETs; Fixtures; Gain; Gallium arsenide; National electric code; Noise figure; Radio frequency; Strips;
Conference_Titel :
Microwave Symposium, 1976 IEEE-MTT-S International
Conference_Location :
Cherry Hill, NJ, USA
DOI :
10.1109/MWSYM.1976.1123660
