DocumentCode
2645410
Title
A 12-15 GHz High Gain Amplifier Design Using Submicron Gate GaAs Field Effect Transistors
Author
Walker, Martin G. ; Crescenzi, E. James, Jr.
fYear
1976
fDate
14-16 June 1976
Firstpage
107
Lastpage
110
Abstract
An amplifier covering 12-15 GHz with 22 dB gain and less than 5.0 dB noise figure using GsAs FETs with submicron gate length was constructed. Techniques used for device characterization and amplifier circuit synthesis along with measured data are presented.
Keywords
Bonding; Circuit synthesis; FETs; Fixtures; Gain; Gallium arsenide; National electric code; Noise figure; Radio frequency; Strips;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1976 IEEE-MTT-S International
Conference_Location
Cherry Hill, NJ, USA
Type
conf
DOI
10.1109/MWSYM.1976.1123660
Filename
1123660
Link To Document