Title :
A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices
Author :
Huang, Y. ; Ho, S.T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA
Abstract :
We describe a numerically efficient semiconductor model for FDTD simulation of optoelectronic and photonic devices that include the essential carrier dynamics such as band filling with Fermi-Dirac thermalization, spectral hole burning, and refractive index change.
Keywords :
band structure; finite difference time-domain analysis; optical hole burning; optoelectronic devices; refractive index; semiconductor device models; FDTD simulation; Fermi-Dirac thermalization dynamics; band filling; carrier dynamics; optoelectronic devices; photonic devices; refractive index; semiconductor model; spectral hole burning; Analytical models; Computational modeling; Computer simulation; Energy states; Finite difference methods; Maxwell equations; Numerical models; Polarization; Thermal engineering; Time domain analysis;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1548744
