Very-High-Speed InP/InGaAs HBT Multiplexer ICs for Optical Communication Systems

Author

Ishii, Kiyoshi

Author_Institution

Dept. of Electron. & Inf. Eng., Chubu Univ., Aichi

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

247

Lastpage

250

Abstract

This paper describes the circuit design of very-high-performance multiplexer (MUX) ICs for optical communications systems. The sophisticated circuit design includes optimization of collector current density of each transistor to achieve both low-power consumption and high-speed operation. Low-power over-40-Gbit/s 16:1 MUX and high-speed 100-Gbit/s selector-type MUX ICs were successfully designed using InP/InGaAs heterojunction bipolar transistors (HBTs)

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit design; multiplexing equipment; optical communication equipment; 100 Gbit/s; 40 Gbit/s; HBT multiplexer IC; InP-GaAs; circuit design; collector current density; heterojunction bipolar transistors; optical communication systems; transistor; very-high-performance multiplexer; Circuit synthesis; Current density; Delay; Design engineering; Flip-flops; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Multiplexing; Optical fiber communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Intelligent Signal Processing and Communications, 2006. ISPACS '06. International Symposium on

Conference_Location

Yonago

Print_ISBN

0-7803-9732-0

Electronic_ISBN

0-7803-9733-9

Type

conf

DOI

10.1109/ISPACS.2006.364878

Filename

4212265