DocumentCode
2646148
Title
On the reverse short-channel effects of submicron MOSFETs
Author
Narayanan, R. ; Latif, Z. ; Conde, A. Qrtiz ; Liou, J.J. ; Golovanova, L. ; Wong, W. ; Sanchez, F. J Garcia
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
fYear
1996
fDate
25-27 Jun 1996
Firstpage
345
Lastpage
349
Abstract
A model for the reverse short-channel effects, based on a nonuniform lateral distribution of channel dopant, is verified with two-dimensional simulation results. The simulated results, in agreements with experimental measurements, reveal that the magnitude of the threshold voltage versus the mask channel length present a maximum value
Keywords
MOSFET; semiconductor device models; mask channel length; model; nonuniform lateral dopant distribution; reverse short-channel effect; submicron MOSFET; threshold voltage; two-dimensional simulation; Doping profiles; Educational institutions; Extrapolation; Length measurement; MOSFET circuits; MOSFETs; Medical simulation; Numerical simulation; Semiconductor process modeling; Threshold voltage; Time division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Southcon/96. Conference Record
Conference_Location
Orlando, FL
ISSN
1087-8785
Print_ISBN
0-7803-3268-7
Type
conf
DOI
10.1109/SOUTHC.1996.535091
Filename
535091
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