A semi-analytical substrate current model of N-channel MOSFETs operating at 77 K and 300 K

Author

Chang, Wen-Chung ; Shen-Li Chen ; Ho, C.S. ; Chen, Y.G.

Author_Institution

TD Dept., Mosel Vitelic Inc., Hsinchu, Taiwan

fYear

1996

fDate

25-27 Jun 1996

Firstpage

350

Lastpage

355

Abstract

In our study, we characterize the temperature and stress dependences of the substrate current, and present a complete substrate-current model which is suitable for both room temperature and liquid-nitrogen temperature operations. The impact ionization phenomenon as well as the temperature and voltage dependence of saturation voltage are also investigated. The theoretical results of our complete substrate-current model from 77 K to 300 K are found in good agreement with the measurement data. This model is suitable for MOSFETs simulation

Keywords

MOSFET; hot carriers; impact ionisation; semiconductor device models; 300 K; 77 K; N-channel MOSFET; hot carrier stress; impact ionization; liquid-nitrogen temperature; room temperature; saturation voltage; semi-analytical model; substrate current; temperature dependence; voltage dependence; Degradation; Electric variables measurement; Hot carriers; Impact ionization; Length measurement; MOSFET circuits; MOSFETs; Stress; Stress measurement; Temperature dependence; Thickness measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Southcon/96. Conference Record

Conference_Location

Orlando, FL

ISSN

1087-8785

Print_ISBN

0-7803-3268-7

Type

conf

DOI

10.1109/SOUTHC.1996.535092

Filename

535092