DocumentCode
2646199
Title
Fabrication of 1.3 μm InGaAsP/InP gain-coupled DFB lasers with absorptive grating using LPE technique
Author
Luo, Yi ; Wang, Wen ; Li, Tong ; He, Bin ; Du, Xiaohang
Author_Institution
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear
1996
fDate
25-27 Jun 1996
Firstpage
367
Lastpage
370
Abstract
Research on a 1.3 μm InGaAsP/InP gain-coupled DFB laser with loss gratings, which is made using LPE, is reported for the first time, and some initial results on the device characteristics are also presented
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; liquid phase epitaxial growth; optical fabrication; semiconductor lasers; 1.3 micron; InGaAsP-InP; LPE; absorptive grating; fabrication; gain-coupled DFB laser; loss grating; Cooling; Epitaxial growth; Fiber lasers; Gratings; Indium phosphide; Laser modes; Laser noise; Optical coupling; Optical device fabrication; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Southcon/96. Conference Record
Conference_Location
Orlando, FL
ISSN
1087-8785
Print_ISBN
0-7803-3268-7
Type
conf
DOI
10.1109/SOUTHC.1996.535095
Filename
535095
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