DocumentCode
2646246
Title
Compact MOSFET modeling for mixed-signal design
Author
Yeh, C.S. ; Luo, Jay ; Lewicki, Larry ; Hwang, K.W. ; Huang, Chuck ; Chen, Henry ; Kao, C.Y. ; Mendel, Robi
Author_Institution
Nat. Semicond. Corp., Santa Clara, CA, USA
fYear
1996
fDate
25-27 Jun 1996
Firstpage
372
Lastpage
377
Abstract
In this paper, the requirements of a good compact MOSFET model for mixed-signal design are discussed. The model accuracy criteria based on the circuit designer´s perspective are given. The issues of statistical modeling, model implementation in a circuit simulator and mixed-signal process characterization are also addressed
Keywords
MOSFET; integrated circuit design; mixed analogue-digital integrated circuits; semiconductor device models; MOSFET model; circuit design; circuit simulation; mixed-signal design; statistical model; Circuit optimization; Circuit simulation; Geometry; Impact ionization; Integrated circuit modeling; Intrusion detection; MOSFET circuits; Semiconductor process modeling; Solid modeling; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Southcon/96. Conference Record
Conference_Location
Orlando, FL
ISSN
1087-8785
Print_ISBN
0-7803-3268-7
Type
conf
DOI
10.1109/SOUTHC.1996.535096
Filename
535096
Link To Document