DocumentCode
2646250
Title
Effects of base and emitter doping gradients on the electrical performance of heterojunction bipolar transistors
Author
Ning, J.H. ; Yuan, J.S. ; Sinanan-Singh, Ramaward
Author_Institution
Lucent Technol., Orlando, FL, USA
fYear
1996
fDate
25-27 Jun 1996
Firstpage
378
Lastpage
384
Abstract
The analytical equations of heterojunction bipolar transistors with nonuniform doping in the base and emitter has been developed. The comparison of the device characteristics between nonuniform and uniform doped HBTs show that the nonuniform doped HBT has higher current gain, higher cutoff frequency, lower base transit time, and lower emitter-base junction capacitance
Keywords
doping profiles; heterojunction bipolar transistors; semiconductor doping; HBT; base doping gradient; base transit time; current gain; cutoff frequency; electrical performance; emitter doping gradient; emitter-base junction capacitance; heterojunction bipolar transistor; nonuniform doping; Bipolar transistors; Capacitance; Cutoff frequency; Doping; Doping profiles; Electric potential; Equations; Heterojunction bipolar transistors; Performance analysis; Permittivity; Technological innovation;
fLanguage
English
Publisher
ieee
Conference_Titel
Southcon/96. Conference Record
Conference_Location
Orlando, FL
ISSN
1087-8785
Print_ISBN
0-7803-3268-7
Type
conf
DOI
10.1109/SOUTHC.1996.535097
Filename
535097
Link To Document