Technology comparison of interface states as measured by charge pumping: bulk vs. SIMOX vs. SOS

Author

Lawrence, R.K. ; Hughes, H.L.

Author_Institution

ARACOR/SFA, Washington, DC, USA

fYear

1989

fDate

3-5 Oct 1989

Firstpage

89

Lastpage

90

Abstract

Summary form only given. The charge pumping technique was used to characterize bulk, SIMOX (SOI) and SOS CMOS technologies with respect to both process and radiation-induced interface-state density levels located at the top-gate silicon/silicon-dioxide interface. Results indicate that bulk and SIMOX technologies lead to nearly the same levels of process-induced and radiation-induced interface state densities, whereas SOS material has much higher levels

Keywords

CMOS integrated circuits; integrated circuit technology; interface electron states; ion implantation; radiation effects; semiconductor-insulator boundaries; CMOS technologies; SIMOX; SOI; SOS; Si-Al₂O₃; Si-SiO₂ interface; bulk technology; charge pumping technique; elemental semiconductor; process induced interface state densities; radiation-induced interface state densities; top gate interface; Appropriate technology; CMOS technology; Capacitance-voltage characteristics; Charge measurement; Charge pumps; Current measurement; Interface states; Isolation technology; Laboratories; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1989., 1989 IEEE

Conference_Location

Stateline, NV

Type

conf

DOI

10.1109/SOI.1989.69780

Filename

69780