Title :
Technology comparison of interface states as measured by charge pumping: bulk vs. SIMOX vs. SOS
Author :
Lawrence, R.K. ; Hughes, H.L.
Author_Institution :
ARACOR/SFA, Washington, DC, USA
Abstract :
Summary form only given. The charge pumping technique was used to characterize bulk, SIMOX (SOI) and SOS CMOS technologies with respect to both process and radiation-induced interface-state density levels located at the top-gate silicon/silicon-dioxide interface. Results indicate that bulk and SIMOX technologies lead to nearly the same levels of process-induced and radiation-induced interface state densities, whereas SOS material has much higher levels
Keywords :
CMOS integrated circuits; integrated circuit technology; interface electron states; ion implantation; radiation effects; semiconductor-insulator boundaries; CMOS technologies; SIMOX; SOI; SOS; Si-Al2O3; Si-SiO2 interface; bulk technology; charge pumping technique; elemental semiconductor; process induced interface state densities; radiation-induced interface state densities; top gate interface; Appropriate technology; CMOS technology; Capacitance-voltage characteristics; Charge measurement; Charge pumps; Current measurement; Interface states; Isolation technology; Laboratories; Silicon;
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
DOI :
10.1109/SOI.1989.69780
