Scalable bipolar transistor model including quasi-saturation effect for BiCMOS application

Author

Dai, Yong ; Yuan, Jiann S. ; Song, Jiling ; Campbell, Pete

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA

fYear

1996

fDate

25-27 Jun 1996

Firstpage

405

Lastpage

412

Abstract

A Gummel-Poon like bipolar transistor model including effects of quasi-saturation is derived. The model includes multi-dimensional effects such as sidewall injection, emitter current crowding, and collector current spreading. A current-dependent epi-layer collector resistance is proposed to model collector conductivity modulation in quasi-saturation. The model has been compared with measurement. Good agreement between the model predictions and experimental data has been obtained

Keywords

BiCMOS integrated circuits; bipolar transistors; semiconductor device models; BiCMOS application; bipolar transistor; collector conductivity modulation; collector current spreading; emitter current crowding; epi-layer collector resistance; multi-dimensional effects; quasi-saturation; scalable Gummel-Poon model; sidewall injection; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Conductivity; Current density; Electrical resistance measurement; Equations; Predictive models; Proximity effect; Semiconductor device modeling; Semiconductor process modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Southcon/96. Conference Record

Conference_Location

Orlando, FL

ISSN

1087-8785

Print_ISBN

0-7803-3268-7

Type

conf

DOI

10.1109/SOUTHC.1996.535102

Filename

535102