• DocumentCode
    2646472
  • Title

    3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices

  • Author

    Amoroso, Salvatore Maria ; Adamu-Lema, Fikru ; Markov, Stanislav ; Gerrer, Louis ; Asenov, Asen

  • Author_Institution
    Device Modelling Group, Univ. of Glasgow, Glasgow, UK
  • fYear
    2012
  • fDate
    22-25 May 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work we present a 3D dynamic simulation analysis for the reliability evaluation of a decananometer MOSFET device. We have focused our attention on the Random Telegraph Noise (RTN) phenomenon, showing that the statistical variability induced by the discrete nature of matter and charge has a fundamental impact on the reliability performance of nanoscale devices, in both transient and steady-state operating regimes.
  • Keywords
    MOSFET; random noise; semiconductor device reliability; 3D dynamic RTN simulation; RTN phenomenon; decananometer MOSFET device; nanoscale devices; random telegraph noise phenomenon; reliability evaluation; size 25 nm; Logic gates; Nanoscale devices; Reliability; Semiconductor process modeling; Solid modeling; Stress; Transient analysis; RTN; Random dopants; charge trapping; device simulation; reliability; statistical variability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2012 15th International Workshop on
  • Conference_Location
    Madison, WI
  • Print_ISBN
    978-1-4673-0705-5
  • Type

    conf

  • DOI
    10.1109/IWCE.2012.6242823
  • Filename
    6242823
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2646472