Title :
3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices
Author :
Amoroso, Salvatore Maria ; Adamu-Lema, Fikru ; Markov, Stanislav ; Gerrer, Louis ; Asenov, Asen
Author_Institution :
Device Modelling Group, Univ. of Glasgow, Glasgow, UK
Abstract :
In this work we present a 3D dynamic simulation analysis for the reliability evaluation of a decananometer MOSFET device. We have focused our attention on the Random Telegraph Noise (RTN) phenomenon, showing that the statistical variability induced by the discrete nature of matter and charge has a fundamental impact on the reliability performance of nanoscale devices, in both transient and steady-state operating regimes.
Keywords :
MOSFET; random noise; semiconductor device reliability; 3D dynamic RTN simulation; RTN phenomenon; decananometer MOSFET device; nanoscale devices; random telegraph noise phenomenon; reliability evaluation; size 25 nm; Logic gates; Nanoscale devices; Reliability; Semiconductor process modeling; Solid modeling; Stress; Transient analysis; RTN; Random dopants; charge trapping; device simulation; reliability; statistical variability;
Conference_Titel :
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location :
Madison, WI
Print_ISBN :
978-1-4673-0705-5
DOI :
10.1109/IWCE.2012.6242823
