DocumentCode
2646487
Title
Electro-thermo-mechanical simulation of AlGaN/GaN HEMTs
Author
Maur, M. Auf der ; Romano, G. ; Carlo, A. Di
Author_Institution
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
fYear
2012
fDate
22-25 May 2012
Firstpage
1
Lastpage
4
Abstract
A fully selfconsistent, coupled electro-thermo-mechanical model for nitride-based devices is presented and applied to a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT). The influence of converse piezoelectric effect, thermal stress and of the selfconsistent coupling on the static device characteristics and on the stress distribution in the device is studied.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; piezoelectricity; stress analysis; wide band gap semiconductors; AlGaN-GaN; HEMT; converse piezoelectric effect; coupled electrothermomechanical model; electrothermomechanical simulation; high-power high electron mobility transistor; nitride-based devices; selfconsistent coupling; static device characteristics; stress distribution; thermal stress; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Mathematical model; Strain; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location
Madison, WI
Print_ISBN
978-1-4673-0705-5
Type
conf
DOI
10.1109/IWCE.2012.6242824
Filename
6242824
Link To Document