A numerical study of amplification of space charge waves in n-GaN films

Author

Garcìa-Barrientos, Abel ; Coyotl-Mixcoatl, Felipe ; Grimalsky, Volodymyr

Author_Institution

Dept. of Mechatron., Polytech. Univ. of Pachuca (UPP), Zempoala, Mexico

fYear

2012

fDate

22-25 May 2012

Firstpage

1

Lastpage

4

Abstract

A Numerical study of amplification of space charge waves (SCW) due to the negative differential conductivity in n-GaN films placed onto a semi-infinite substrate is investigated. A case of transverse non-uniform film is considered. The set of balance equations for concentration, drift velocity, and the averaged energy to describe the dynamics of space charge waves were used jointly with the Poisson equation for the electric field. It is possible to observe an amplification of SCW in n-GaN films of submicron thicknesses at essentially higher frequencies f >;100 GHz, when compared with n-GaAs. Two-dimensional simulation of spatial distribution of the alternative part of the electric field of space charge wave in 2D is presented.

Keywords

III-V semiconductors; Poisson equation; amplification; electrical conductivity; gallium compounds; semiconductor epitaxial layers; space charge waves; wide band gap semiconductors; GaN; Poisson equation; balance equations; drift velocity; electric field effects; epitaxial layer; gallium nitride films; negative differential conductivity; semiinfinite substrate; space charge wave amplification; spatial distribution; two-dimensional simulation; Conductivity; Electric fields; Electron mobility; Films; Gallium nitride; Mathematical model; Space charge; n-GaN films; negative differential conductivity; space charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2012 15th International Workshop on

Conference_Location

Madison, WI

Print_ISBN

978-1-4673-0705-5

Type

conf

DOI

10.1109/IWCE.2012.6242825

Filename

6242825