DocumentCode :
2646541
Title :
Multiband tight-binding model for strained and bilayer graphene from DFT calculations
Author :
Boykin, T.B. ; Luisier, M. ; Kharche, N. ; Jaing, X. ; Nayak, S.K. ; Martini, A. ; Klimeck, G.
Author_Institution :
ECE Dept., Univ. of Alabama in Huntsville, Huntsville, AL, USA
fYear :
2012
fDate :
22-25 May 2012
Firstpage :
1
Lastpage :
4
Abstract :
The single π-orbital model for graphene has been successful for extended, perfectly flat sheets. However, it cannot model hydrogen passivation, multi-layer structures, or rippled sheets. We address these shortcomings by adding a full complement of d-orbitals to the traditional {s, p} set. To model strain behavior and multi-layer structures we fit scaling exponents and introduce a long-range scaling modulation function. We apply the model to rippled graphene nanoribbons and bilayer graphene sheets.
Keywords :
density functional theory; graphene; multilayers; nanoribbons; sheet materials; tight-binding calculations; C; DFT calculations; bilayer graphene sheets; d-orbitals; flat sheets; long-range scaling modulation function; multiband tight-binding model; multilayer structures; rippled graphene nanoribbons; single π-orbital model; strain behavior; strained graphene; Computational modeling; Discrete Fourier transforms; Educational institutions; Semiconductor device modeling; Strain; USA Councils; density-functional theory; graphene; tight-binding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location :
Madison, WI
Print_ISBN :
978-1-4673-0705-5
Type :
conf
DOI :
10.1109/IWCE.2012.6242826
Filename :
6242826
Link To Document :
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