Title :
Electron drift velocity and mobility calculation in bulk silicon using an analytical model for the phonon dispersions
Author :
Gada, M.L. ; Vasileska, D. ; Goodnick, S.M. ; Raleva, K.
Author_Institution :
Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
Abstract :
We present simulation results for the drift velocity and mobility in silicon at various temperatures using analytical model which incorporates analytical expressions for the acoustic and optical phonon dispersions. Our simulation results for the field-dependent average drift velocity and mobility are in excellent agreement with the results that utilize the rejection technique and the experimental data for silicon for [100] crystallographic direction at different temperatures.
Keywords :
acoustic dispersion; electron mobility; elemental semiconductors; optical dispersion; phonon dispersion relations; silicon; Si; [100] crystallographic direction; acoustic phonon dispersions; analytical model; bulk silicon; drift mobility calculation; electron drift velocity; field-dependent average drift velocity; optical phonon dispersions; rejection technique; Acoustics; Analytical models; Electron mobility; Optical scattering; Phonons; Silicon; bulk Monte Carlo method; phonon dispersion; silicon electron drift velocity; silicon electron mobility;
Conference_Titel :
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location :
Madison, WI
Print_ISBN :
978-1-4673-0705-5
DOI :
10.1109/IWCE.2012.6242831
