DocumentCode :
2646682
Title :
Pulsed-power switching by power semiconductor devices
Author :
Jiang, Weihua ; Oshima, Nobuaki ; Yokoo, Tomoyuki ; Nakahiro, Kyosuke ; Honma, Hirokazu ; Takayama, Ken ; Shimizu, Naohiro ; Tokuchi, Akira
Author_Institution :
Nagaoka Univ. of Technol., Niigata
fYear :
2006
fDate :
4-8 June 2006
Firstpage :
152
Lastpage :
152
Abstract :
Summary form only given. Repetitive pulsed high-voltage modulators have been developed for industrial applications. They have used the most up-to-date power semiconductor devices such as power MOSFETs, silicon carbide JFETs, static-induction thyristors (SIThy), and semiconductor opening switches (SOS). As a new kind of high-energy particle accelerator, induction synchrotron requires pulsed high-voltage modulators with repetition rate on the order of 1 MHz. A test unit of stacked MOSFET has been successfully developed and tested for continuous operation. In the same time, SIThy and SiC-FET are also investigated for their performance as potential substitutes to MOSFET. A pulsed high-voltage generator using SOS has been developed for applications in sterilization. It consists of a primary unit which is switched by an IGBT and a secondary unit where two magnetic switches and an SOS are used. A pulse transformer is used to multiply the voltage between the two units. The output voltage pulses are of 60 kV in peak value and 50 ns in pulse width, with continuous repetition rate of 1 kHz
Keywords :
junction gate field effect transistors; power MOSFET; power semiconductor switches; power transformers; pulse generators; pulse transformers; pulsed power supplies; pulsed power switches; thyristors; 1 kHz; 50 ns; 60 kV; IGBT; high-energy particle accelerator; induction synchrotron; industrial applications; magnetic switches; power MOSFET; power semiconductor devices; pulse transformer; pulsed high-voltage generator; pulsed-power switching; repetitive pulsed high-voltage modulators; semiconductor opening switches; silicon carbide JFET; static-induction thyristors; JFETs; MOSFETs; Magnetic switching; Power semiconductor devices; Power semiconductor switches; Pulse modulation; Pulse transformers; Silicon carbide; Space vector pulse width modulation; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts. The 33rd IEEE International Conference on
Conference_Location :
Traverse City, MI
Print_ISBN :
1-4244-0125-9
Type :
conf
DOI :
10.1109/PLASMA.2006.1707024
Filename :
1707024
Link To Document :
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