DocumentCode :
2646707
Title :
Scattering in GaAs for Fermi kinetics transport
Author :
Grupen, Matt
Author_Institution :
Air Force Res. Lab., Wright-Patterson AFB, OH, USA
fYear :
2012
fDate :
22-25 May 2012
Firstpage :
1
Lastpage :
4
Abstract :
Progress on a Fermi kinetics hot electron transport model, a numerically efficient approach based on ideal Fermi gas thermodynamics, is reported. The basics of the model are first reviewed, and then methods for incorporating ionized impurity, acoustic phonon, and long range electron-electron scattering are described. The different roles the various scattering mechanisms serve within the model and their effects on simulation results are also presented.
Keywords :
III-V semiconductors; electron transport theory; electron-electron interactions; fermion systems; gallium arsenide; wide band gap semiconductors; Fermi gas thermodynamics; Fermi kinetics hot electron transport model; GaAs; acoustic phonon; electron-electron scattering; Acoustics; Gallium arsenide; Kinetic theory; Optical scattering; Phonons; Plasmons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location :
Madison, WI
Print_ISBN :
978-1-4673-0705-5
Type :
conf
DOI :
10.1109/IWCE.2012.6242834
Filename :
6242834
Link To Document :
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