DocumentCode :
2646879
Title :
Switching response modeling of the CMOS inverter for sub-micron devices
Author :
Bisdounis, L. ; Nikolaidis, S. ; Koufopavlou, O. ; Goutis, C.
Author_Institution :
VLSI Design Lab., Patras Univ., Greece
fYear :
1998
fDate :
23-26 Feb 1998
Firstpage :
729
Lastpage :
735
Abstract :
In this paper an accurate, analytical model for the evaluation of the CMOS inverter delay in the sub-micron regime, is presented. A detailed analysis of the inverter operation is provided which results in accurate expressions describing the output waveform. These analytical expressions are valid for all the inverter operation regions and input waveform slopes. They take into account the influences of the short-circuit current during switching, and the gate-to-drain coupling capacitance. The presented model shows clearly the influence of the inverter design characteristics, the load capacitance, and the slope of the input waveform driving the inverter on the propagation delay. The results are in excellent agreement with SPICE simulations
Keywords :
CMOS logic circuits; SPICE; capacitance; circuit analysis computing; delays; logic CAD; logic gates; CMOS inverter; SPICE simulations; gate-to-drain coupling capacitance; input waveform slopes; inverter design characteristics; load capacitance; output waveform; propagation delay; short-circuit current; sub-micron devices; switching response modeling; Capacitance; Circuit simulation; Delay; Differential equations; Inverters; Physics computing; SPICE; Semiconductor device modeling; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Automation and Test in Europe, 1998., Proceedings
Conference_Location :
Paris
Print_ISBN :
0-8186-8359-7
Type :
conf
DOI :
10.1109/DATE.1998.655939
Filename :
655939
Link To Document :
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