MTJs with a composite free layer for high-speed spin transfer torque RAM: Micromagnetic simulations

Author

Makarov, Alexander ; Sverdlov, Viktor ; Selberherr, Siegfried

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria

fYear

2012

fDate

22-25 May 2012

Firstpage

1

Lastpage

4

Abstract

We demonstrate a substantial decrease of the switching time in penta-layer MTJs with a composite free layer regardless of the size and aspect ratio of the MTJ. The composite magnetic layer consists of two half-ellipses separated by a non-magnetic spacer. We analyze the peculiarities of the magnetic dynamics of these MTJs and reveal the physical reason for the decrease of the switching time. The scaling potential based on an analysis of the thermal stability is discussed. Furthermore, we outline the method for increasing the thermal.

Keywords

MRAM devices; magnetic tunnelling; magnetoelectronics; micromagnetics; thermal analysis; thermal stability; aspect ratio; composite free layer; composite magnetic layer; high-speed spin transfer torque RAM; magnetic dynamics; magnetic tunnel junction; micromagnetic simulations; nonmagnetic spacer; penta-layer MTJ; thermal stability analysis; Junctions; Magnetic tunneling; Magnetization; Perpendicular magnetic anisotropy; Stability analysis; Switches; Thermal stability; MTJ; STT-MRAM; composite free layer; micromagnetic modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2012 15th International Workshop on

Conference_Location

Madison, WI

Print_ISBN

978-1-4673-0705-5

Type

conf

DOI

10.1109/IWCE.2012.6242842

Filename

6242842