DocumentCode
2646897
Title
A High-Power Solid-State C-Band Transmitter for MlS Applications
Author
Tsai, W.C. ; Gray, R.E. ; Grace, M.I.
fYear
1976
fDate
14-16 June 1976
Firstpage
325
Lastpage
327
Abstract
A solid-state C-band transmitter was developed for the Microwave Landing System. The key component of the transmitter is a solid-state power amplifier using GaAs Read-profile IMPATT diodes to obtain operating output levels approaching 20 Watts. The transmitter also contains a phase-locked oscillator, a phase modulator integrated into the power amplifier, and a pulse shaping network to achieve minimum spectrum spreading. The entire transmitter, including power supplies, logic circuits and heat sinks, is contained in a 12" x 12" x 6-1/2" package.
Keywords
Diodes; Electromagnetic heating; Gallium arsenide; Microwave oscillators; Multilevel systems; Phase modulation; Power amplifiers; Pulse amplifiers; Solid state circuits; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1976 IEEE-MTT-S International
Conference_Location
Cherry Hill, NJ, USA
Type
conf
DOI
10.1109/MWSYM.1976.1123739
Filename
1123739
Link To Document