• DocumentCode
    2646897
  • Title

    A High-Power Solid-State C-Band Transmitter for MlS Applications

  • Author

    Tsai, W.C. ; Gray, R.E. ; Grace, M.I.

  • fYear
    1976
  • fDate
    14-16 June 1976
  • Firstpage
    325
  • Lastpage
    327
  • Abstract
    A solid-state C-band transmitter was developed for the Microwave Landing System. The key component of the transmitter is a solid-state power amplifier using GaAs Read-profile IMPATT diodes to obtain operating output levels approaching 20 Watts. The transmitter also contains a phase-locked oscillator, a phase modulator integrated into the power amplifier, and a pulse shaping network to achieve minimum spectrum spreading. The entire transmitter, including power supplies, logic circuits and heat sinks, is contained in a 12" x 12" x 6-1/2" package.
  • Keywords
    Diodes; Electromagnetic heating; Gallium arsenide; Microwave oscillators; Multilevel systems; Phase modulation; Power amplifiers; Pulse amplifiers; Solid state circuits; Transmitters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium, 1976 IEEE-MTT-S International
  • Conference_Location
    Cherry Hill, NJ, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1976.1123739
  • Filename
    1123739