DocumentCode :
2646949
Title :
A fast approach to discontinuous Galerkin solvers for Boltzmann-Poisson transport systems for full electronic bands and phonon scattering
Author :
Gamba, Irene M. ; Majorana, Armando ; Morales, Jose A. ; Shu, Chi-Wang
Author_Institution :
ICES, Univ. of Texas at Austin, Austin, TX, USA
fYear :
2012
fDate :
22-25 May 2012
Firstpage :
1
Lastpage :
4
Abstract :
The present work is motivated by the development of a fast DG based deterministic solver for the extension of the BTE to a system of transport Boltzmann equations for full electronic multiband transport with intraband scattering mechanisms. Our proposed method allows to find scattering effects of high complexity, such as anisotropic electronic bands or full band computations, by simply using the standard routines of a suitable Monte Carlo approach only once. In this short paper, we restrict our presentation to the single band problem as it will be also valid in the multiband system as well. We present preliminary numerical tests of this method using the Kane energy band model, for a 1-D 400nm n+ - n - n+ silicon channel diode, showing moments at t = 0.5ps and t = 3.0ps.
Keywords :
Boltzmann equation; Galerkin method; Monte Carlo methods; electron-phonon interactions; Boltzmann-Poisson transport systems; Kane energy band model; Monte Carlo method; discontinuous Galerkin solvers; electron-phonon interactions; electronic bands; electronic multi-band transport; intra-band scattering; multi-band system; phonon scattering; silicon channel diode; single band problem; Approximation methods; Equations; Mathematical model; Moment methods; Monte Carlo methods; Scattering; Standards;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location :
Madison, WI
Print_ISBN :
978-1-4673-0705-5
Type :
conf
DOI :
10.1109/IWCE.2012.6242847
Filename :
6242847
Link To Document :
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