DocumentCode
2646984
Title
A comparative study of wire bonding versus solder bumping of power semiconductor devices
Author
Liu, Xingsheng ; Jing, Xiukuan ; Lu, Guo-Quan
Author_Institution
Power Electron. Packaging Lab., Virginia Tech., Blacksburg, VA, USA
fYear
2000
fDate
2000
Firstpage
74
Lastpage
78
Abstract
Through a comparative study of wire bonding and solder bumping of power semiconductor devices, the advantages of solder bump interconnection are indicated. The fabrication process, electrical performance, thermal performance and reliability issues and results are presented and compared for these two technologies
Keywords
interconnections; lead bonding; modules; power semiconductor devices; semiconductor device packaging; semiconductor device reliability; soldering; thermal management (packaging); electrical performance; fabrication process; power semiconductor devices; reliability; solder bump interconnection; solder bumping; thermal performance; wire bonding; Bonding; Chip scale packaging; Electronic packaging thermal management; Electronics packaging; Insulated gate bipolar transistors; Integrated circuit packaging; Power electronics; Power semiconductor devices; Semiconductor device packaging; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Power Packaging, 2000. IWIPP 2000. International Workshop on
Conference_Location
Waltham, MA
Print_ISBN
0-7803-6437-6
Type
conf
DOI
10.1109/IWIPP.2000.885185
Filename
885185
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