DocumentCode :
2646984
Title :
A comparative study of wire bonding versus solder bumping of power semiconductor devices
Author :
Liu, Xingsheng ; Jing, Xiukuan ; Lu, Guo-Quan
Author_Institution :
Power Electron. Packaging Lab., Virginia Tech., Blacksburg, VA, USA
fYear :
2000
fDate :
2000
Firstpage :
74
Lastpage :
78
Abstract :
Through a comparative study of wire bonding and solder bumping of power semiconductor devices, the advantages of solder bump interconnection are indicated. The fabrication process, electrical performance, thermal performance and reliability issues and results are presented and compared for these two technologies
Keywords :
interconnections; lead bonding; modules; power semiconductor devices; semiconductor device packaging; semiconductor device reliability; soldering; thermal management (packaging); electrical performance; fabrication process; power semiconductor devices; reliability; solder bump interconnection; solder bumping; thermal performance; wire bonding; Bonding; Chip scale packaging; Electronic packaging thermal management; Electronics packaging; Insulated gate bipolar transistors; Integrated circuit packaging; Power electronics; Power semiconductor devices; Semiconductor device packaging; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Power Packaging, 2000. IWIPP 2000. International Workshop on
Conference_Location :
Waltham, MA
Print_ISBN :
0-7803-6437-6
Type :
conf
DOI :
10.1109/IWIPP.2000.885185
Filename :
885185
Link To Document :
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