Characteristics of plasma near the target biased with a high negative pulse

Summary form only given. In PSII, the conducting target is immersed in the plasma and the dose of implanted ions is controlled by the plasma density at the sheath edge. When evaluating the ion current or sheath formation, the stationary-bulk plasma density has been adapted. However the dynamic sheath is expanded with the applied pulse voltage on the target and the field in the sheath is enough to break down the gas. The emitted secondary electrons also employs on the perturbing the bulk plasma. Thus the sheath formation near the pulsed target should be influenced by the temporal plasma property with applying the voltage. The measurements are carried out in the target plasmas which are generated by the pulsed bias only and by the pulsed bias and the external RF power. Also the temporal property is obtained for the plasma generated by the pulsed RF plasma. The temporal plasma properties near the target and in the bulk are monitored by a RF compensated Langmuir probe. The current-voltage probe data is analyzed with the newly developed algorithm based on the biorthogonal wavelet transform. The properties, EEDF, electron temperature and density, are obtained with various pulse conditions and gases. Effects of the temporal and stationary plasmas on the Child-Langmuir sheath formation in front of the target will be discussed