Title :
Characterization of solderable metallization on power devices for 3-D packaging
Author :
Haque, Shatil ; Lu, Guo-Quan
Author_Institution :
Electr. Drive Syst., Ecostar, Dearborn, MI, USA
Abstract :
This paper presents processing issues of solderable metallization on two different IGBTs (insulated gate bipolar transistors) for three-dimensional packaging. Identical metallization processes via sputtering have resulted in different contact resistances due to the different passivation materials (Si3N4 and polyimide) of the two devices. XPS and SEM characterization of surface compositions of device contact pads resulting in different electrical contact resistances are analyzed
Keywords :
X-ray photoelectron spectra; contact resistance; insulated gate bipolar transistors; passivation; polymer films; power bipolar transistors; scanning electron microscopy; semiconductor device metallisation; semiconductor device packaging; sputter deposition; surface composition; 3D packaging; IGBTs; SEM; Si3N4; Si3N4 passivation materials; XPS; contact resistance; device contact pads; electrical contact resistances; insulated gate bipolar transistors; metallization processes; polyimide passivation materials; power devices; solderable metallization; sputtering; surface composition; Contacts; Electronics packaging; Fabrication; Insulated gate bipolar transistors; Metallization; Multichip modules; Power electronics; Power system interconnection; Sputtering; Wire;
Conference_Titel :
Integrated Power Packaging, 2000. IWIPP 2000. International Workshop on
Conference_Location :
Waltham, MA
Print_ISBN :
0-7803-6437-6
DOI :
10.1109/IWIPP.2000.885188
