Title :
Package effects on avalanche rating of power MOSFETs
Author :
McShane, E. ; Shenai, K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
Device avalanche rating is a common figure of merit for comparing packaged parts. The rating has been shown to be affected by internal thermal dynamics. These dynamics can be influenced by the package thermal properties. The effect of package thermal performance on avalanche rating is investigated and a compact analytical expression to obtain the avalanche current is described
Keywords :
avalanche breakdown; failure analysis; power MOSFET; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; semiconductor device packaging; semiconductor device reliability; thermal management (packaging); avalanche current; avalanche rating; device avalanche rating; figure of merit; internal thermal dynamics; package effects; package thermal performance; package thermal properties; packaged parts; power MOSFETs; Capacitance; Current density; Electronic packaging thermal management; Impact ionization; Inductors; MOSFETs; Microwave integrated circuits; Numerical simulation; Temperature; Thermal conductivity;
Conference_Titel :
Integrated Power Packaging, 2000. IWIPP 2000. International Workshop on
Conference_Location :
Waltham, MA
Print_ISBN :
0-7803-6437-6
DOI :
10.1109/IWIPP.2000.885189
