Modeling of HgCdTe photodetectors in the LWIR region

Author

Muralidharan, Pradyumna ; Vasileska, Dragica ; Wijewarnasuriya, Priyalal S.

Author_Institution

Sch. of Electr., Arizona State Univ., Tempe, AZ, USA

fYear

2012

fDate

22-25 May 2012

Firstpage

1

Lastpage

4

Abstract

We have developed a computer program that simulates the electrical characteristics of a p⁺ - n HgCdTe photodetector. Using solutions to the Poisson and Continuity equations we investigate low temperature behavior to determine optimum working conditions to enhance detectivity. Our model considers complete Fermi - Dirac statistics, major recombination mechanisms, band to band tunneling, trap assisted tunneling and impact ionization. Device performance was analyzed as a function of doping and temperature. Simulations show detectivity >; 10¹¹ Jones at 77 K for Hg_0.78Cd_0.22Te.

Keywords

II-VI semiconductors; Poisson equation; cadmium compounds; impact ionisation; infrared detectors; mercury compounds; photodetectors; quantum statistical mechanics; semiconductor device models; semiconductor doping; tunnelling; HgCdTe; LWIR region; Poisson equations; band-to-band tunneling; complete Fermi-Dirac statistics; computer program; continuity equations; device performance; doping; electrical characteristics; impact ionization; low temperature behavior; optimum working conditions; p⁺-n photodetector; recombination mechanisms; trap assisted tunneling; Absorption; Detectors; Equations; Materials; Mathematical model; Photonic band gap; Tunneling; II — VI Semiconductor materials; Infrared detectors; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2012 15th International Workshop on

Conference_Location

Madison, WI

Print_ISBN

978-1-4673-0705-5

Type

conf

DOI

10.1109/IWCE.2012.6242853

Filename

6242853