Self-heating and current degradation in 25 nm FD SOI devices with (100) and (110) crystallographic orientation

Author

Raleva, K. ; Vasileska, D. ; Goodnick, S.M.

Author_Institution

Fac. of Electr. Eng. & Inf. Technol., “Ss. Cyril & Methodius” Univ., Skopje, Macedonia

fYear

2012

fDate

22-25 May 2012

Firstpage

1

Lastpage

4

Abstract

In this paper we present simulation results obtained with our electro-thermal particle-based device simulator for 25 nm fully depleted silicon-on-insulator devices with (100) and (110) crystallographic orientations. We also investigate the importance of the proper choice of the thermal conductivity model (which is particularly important for thin silicon films) in properly predicting the average maximum temperature and the maximum temperature in the hot spot which are important parameters regarding device reliability.

Keywords

crystallography; semiconductor device reliability; silicon-on-insulator; thermal conductivity; FD SOI devices; crystallographic orientation; current degradation; device reliability; electrothermal particle-based device simulator; fully depleted silicon-on-insulator devices; self-heating degradation; size 25 nm; thermal conductivity model; thin silicon films; Conductivity; Degradation; Semiconductor device modeling; Silicon; Temperature dependence; Thermal conductivity; Thermal degradation; Silicon-On-Insulator devices; crystallographic orientations; electro-thermal particle based device simulation; thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2012 15th International Workshop on

Conference_Location

Madison, WI

Print_ISBN

978-1-4673-0705-5

Type

conf

DOI

10.1109/IWCE.2012.6242855

Filename

6242855