Analysis of threshold voltage variation using stacked-FET power amplifiers

Author

Handa, Mitul ; Kumar, Sandeep ; Bhasin, Himanshu ; Kanaujia, Binod Kumar ; Dwari, Santanu

Author_Institution

Dept. of Electron. & Commun. Eng., AIACT&R, New Delhi, India

fYear

2014

fDate

15-17 Dec. 2014

Firstpage

1

Lastpage

4

Abstract

This paper introduces a novel concept of threshold voltage variation analysis using stacked-FET Power amplifier (PA). In this work, a conventional adaptive biasing circuit is merged with two stacked FET which controls and minimizes the fluctuations of the threshold voltage variation for class AB PA. Analytical equations are derived to achieve much less variation of threshold voltage shift. Comparisons of threshold voltage variation using popularly used materials like Gallium Nitride, Gallium Arsenide and Silicon with predictive technology model of 65nm and 45nm is shown. With this new conception, it is possible to reduce the impact of reliability issues on PA when threshold voltage shifts significantly.

Keywords

III-V semiconductors; elemental semiconductors; field effect transistors; gallium arsenide; gallium compounds; power amplifiers; silicon; wide band gap semiconductors; GaAs; GaN; Si; class AB PA; conventional adaptive biasing circuit; fluctuations; reliability; size 65 nm to 45 nm; stacked-FET power amplifiers; threshold voltage variation; Capacitance; Gallium nitride; Performance evaluation; Reliability; Silicon; Threshold voltage; Adaptive biasing; Power amplifier (PA); Stacked FET; Threshold voltage variation;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial and Information Systems (ICIIS), 2014 9th International Conference on

Conference_Location

Gwalior

Print_ISBN

978-1-4799-6499-4

Type

conf

DOI

10.1109/ICIINFS.2014.7036509

Filename

7036509