0.5 V 1.3 GHz voltage controlled ring oscillator

Author

Li, Tianwang ; Ye, Bo ; Jiang, Jinguang

Author_Institution

Dept. of Integrated Circuits & Commun. Software, Wuhan Univ., Wuhan, China

fYear

2009

fDate

20-23 Oct. 2009

Firstpage

1181

Lastpage

1184

Abstract

A three stage ultra low power, low voltage ring oscillator is presented in this paper. The bulk of the PMOS transistor is used as the control voltage, the substrate of the NMOS transistor is also forward biased to reduce the threshold of the NMOS transistor for low voltage operation. The proposed VCO is designed and simulated in 0.18 Â¿m RF CMOS process. Simulation results show that the proposed VCO can work at 0.5 V power supply, the oscillation frequency of VCO is from 124 MHz to 1.3 GHz. The power consumption is 85 Â¿W when the VCO works at 1.3 GHz.

Keywords

CMOS integrated circuits; MOSFET; low-power electronics; radiofrequency integrated circuits; voltage-controlled oscillators; NMOS transistor; PMOS transistor; RF CMOS process; frequency 1.3 GHz; low voltage ring oscillator; oscillation frequency; power 85 muW; size 0.18 mum; ultra low power ring oscillator; voltage 0.5 V; voltage controlled ring oscillator; CMOS process; Energy consumption; Low voltage; MOSFETs; Power supplies; Radio frequency; Ring oscillators; Threshold voltage; Voltage control; Voltage-controlled oscillators; Ultra low power; bulk biasing; low voltage; ring oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2009. ASICON '09. IEEE 8th International Conference on

Conference_Location

Changsha, Hunan

Print_ISBN

978-1-4244-3868-6

Electronic_ISBN

978-1-4244-3870-9

Type

conf

DOI

10.1109/ASICON.2009.5351177

Filename

5351177