DocumentCode
2647641
Title
Evaluation of power MOSFET models
Author
Budihardjo, Irwan ; Lauritzen, P.O.
Author_Institution
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
fYear
1994
fDate
11-13 Oct 1994
Firstpage
48
Lastpage
53
Abstract
The device models are used in simulation of power converter circuits to enable accurate simulation of switching waveforms. Two selected power MOSFET models are thoroughly evaluated through C-V plots, gate charge plots, and converter data. Any proprietary model can be evaluated using three simple simulations
Keywords
power MOSFET; C-V plots; gate charge plots; power MOSFET models; power converter circuits; simulation; switching waveforms; Circuit simulation; Diodes; Impedance; MOSFET circuits; Parasitic capacitance; Power MOSFET; Power system modeling; Pulse width modulation; SPICE; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Northcon/94 Conference Record
Conference_Location
Seattle, WA
Print_ISBN
0-7803-9995-1
Type
conf
DOI
10.1109/NORTHC.1994.638967
Filename
638967
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