DocumentCode :
2647658
Title :
A systematic technique to modeling of power semiconductor devices for power electronic simulation
Author :
Ma, Cliff L. ; Lauritzen, P.O.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
fYear :
1994
fDate :
11-13 Oct 1994
Firstpage :
54
Lastpage :
59
Abstract :
Accurate power semiconductor device models are needed to predict large overshoot voltages and currents, switching power losses, conducted EMI etc. in the design of high performance, reliable power converters. A new systematic modeling technique, the lumped-charge modeling technique, is used to construct high power device models for power electronic circuit simulation. The lumped-charge models are composed of simple and continuous device equations and are valid over a wide range of operation. They represent a new generation of accurate power semiconductor device models
Keywords :
power semiconductor devices; GTO; MOSFET; SCR; conducted EMI; continuous device equations; high power device models; lumped-charge modeling technique; modeling; overshoot currents; overshoot voltages; power converter design; power diode; power electronic simulation; power semiconductor devices; switching power losses; Electromagnetic interference; Performance loss; Power semiconductor devices; Power semiconductor switches; Power system modeling; Power system reliability; Predictive models; Semiconductor device reliability; Switching converters; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Northcon/94 Conference Record
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-9995-1
Type :
conf
DOI :
10.1109/NORTHC.1994.638968
Filename :
638968
Link To Document :
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