DocumentCode
2647658
Title
A systematic technique to modeling of power semiconductor devices for power electronic simulation
Author
Ma, Cliff L. ; Lauritzen, P.O.
Author_Institution
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
fYear
1994
fDate
11-13 Oct 1994
Firstpage
54
Lastpage
59
Abstract
Accurate power semiconductor device models are needed to predict large overshoot voltages and currents, switching power losses, conducted EMI etc. in the design of high performance, reliable power converters. A new systematic modeling technique, the lumped-charge modeling technique, is used to construct high power device models for power electronic circuit simulation. The lumped-charge models are composed of simple and continuous device equations and are valid over a wide range of operation. They represent a new generation of accurate power semiconductor device models
Keywords
power semiconductor devices; GTO; MOSFET; SCR; conducted EMI; continuous device equations; high power device models; lumped-charge modeling technique; modeling; overshoot currents; overshoot voltages; power converter design; power diode; power electronic simulation; power semiconductor devices; switching power losses; Electromagnetic interference; Performance loss; Power semiconductor devices; Power semiconductor switches; Power system modeling; Power system reliability; Predictive models; Semiconductor device reliability; Switching converters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Northcon/94 Conference Record
Conference_Location
Seattle, WA
Print_ISBN
0-7803-9995-1
Type
conf
DOI
10.1109/NORTHC.1994.638968
Filename
638968
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