Title : 
A systematic technique to modeling of power semiconductor devices for power electronic simulation
         
        
            Author : 
Ma, Cliff L. ; Lauritzen, P.O.
         
        
            Author_Institution : 
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
         
        
        
        
        
        
            Abstract : 
Accurate power semiconductor device models are needed to predict large overshoot voltages and currents, switching power losses, conducted EMI etc. in the design of high performance, reliable power converters. A new systematic modeling technique, the lumped-charge modeling technique, is used to construct high power device models for power electronic circuit simulation. The lumped-charge models are composed of simple and continuous device equations and are valid over a wide range of operation. They represent a new generation of accurate power semiconductor device models
         
        
            Keywords : 
power semiconductor devices; GTO; MOSFET; SCR; conducted EMI; continuous device equations; high power device models; lumped-charge modeling technique; modeling; overshoot currents; overshoot voltages; power converter design; power diode; power electronic simulation; power semiconductor devices; switching power losses; Electromagnetic interference; Performance loss; Power semiconductor devices; Power semiconductor switches; Power system modeling; Power system reliability; Predictive models; Semiconductor device reliability; Switching converters; Voltage;
         
        
        
        
            Conference_Titel : 
Northcon/94 Conference Record
         
        
            Conference_Location : 
Seattle, WA
         
        
            Print_ISBN : 
0-7803-9995-1
         
        
        
            DOI : 
10.1109/NORTHC.1994.638968