• DocumentCode
    2647658
  • Title

    A systematic technique to modeling of power semiconductor devices for power electronic simulation

  • Author

    Ma, Cliff L. ; Lauritzen, P.O.

  • Author_Institution
    Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
  • fYear
    1994
  • fDate
    11-13 Oct 1994
  • Firstpage
    54
  • Lastpage
    59
  • Abstract
    Accurate power semiconductor device models are needed to predict large overshoot voltages and currents, switching power losses, conducted EMI etc. in the design of high performance, reliable power converters. A new systematic modeling technique, the lumped-charge modeling technique, is used to construct high power device models for power electronic circuit simulation. The lumped-charge models are composed of simple and continuous device equations and are valid over a wide range of operation. They represent a new generation of accurate power semiconductor device models
  • Keywords
    power semiconductor devices; GTO; MOSFET; SCR; conducted EMI; continuous device equations; high power device models; lumped-charge modeling technique; modeling; overshoot currents; overshoot voltages; power converter design; power diode; power electronic simulation; power semiconductor devices; switching power losses; Electromagnetic interference; Performance loss; Power semiconductor devices; Power semiconductor switches; Power system modeling; Power system reliability; Predictive models; Semiconductor device reliability; Switching converters; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Northcon/94 Conference Record
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    0-7803-9995-1
  • Type

    conf

  • DOI
    10.1109/NORTHC.1994.638968
  • Filename
    638968