Stochastic inductance model of OTA-based inductor

In this research, the effect of the stochastic nature of the bias current to the inductance of the OTA-based inductor has been explored and modeled as the corresponding probability density function, PDF which the complete probabilistic distribution information can be obtained. This research has been performed based upon CMOS technology. The derived model has been found to provide a sufficient accuracy due to the strong agreement between its corresponding calculated cumulative distribution function, CDF and the measured one. The proposed model is promisingly applicable to the OTA-based inductor of any topologies constructed with any basis OTA. Hence, it has been found to be a convenience tool for the design of various applications of the OTA-based inductor. Furthermore, the conceptual idea behind this research is also applicable to any current controlled active inductor.