Title :
Side extraction duopigatron-type ion source for ion implantation
Author :
Gushenets, V.I. ; Oks, E.M. ; Hershcovitch, Ady ; Johnson, B.M. ; Kulevoy, T.V.
Author_Institution :
High Current Electron. Inst., Russian Acad. of Sci., Tomsk
Abstract :
Summary form only given. We have designed and constructed a compact duoPIGatron-type ion source, for possible use in ion implanters, such that the ion can be extracted from side aperture in contrast to conventional duoPIGatron sources with axial ion extraction. The size of the side extraction aperture is 1times40 mm. The ion source was developed to study physical and technological aspects relevant to an industrial ion source. The side extraction duoPIGatron has stable arc, uniformly bright illumination, and dense plasma. The present work describes some of preliminary operating parameters of the ion source using argon, BF3. The total unanalyzed beam currents are 23 mA using Ar at an arc current of 5 A and 13 mA using BF3 gas at an arc current of 6 A
Keywords :
arcs (electric); argon; boron compounds; ion sources; particle beam extraction; plasma sources; 1 mm; 13 mA; 23 mA; 40 mm; 5 A; 6 A; Ar; BF3; arc current; axial ion extraction; dense plasma; duoPIGatron-type ion source; ion implantation; stable arc; Apertures; Argon; Ion implantation; Ion sources; Lighting; Plasma applications; Plasma density; Plasma immersion ion implantation; Plasma sources; Plasma stability;
Conference_Titel :
Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts. The 33rd IEEE International Conference on
Conference_Location :
Traverse City, MI
Print_ISBN :
1-4244-0125-9
DOI :
10.1109/PLASMA.2006.1707097
